Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
Identifieur interne : 002A21 ( Main/Repository ); précédent : 002A20; suivant : 002A22Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
Auteurs : RBID : Pascal:12-0068841Descripteurs français
- Pascal (Inist)
- Propriété matériau, Méthode MOCVD, Haute température, Nucléation, Rétrodiffusion Rutherford, Photoluminescence, Microstructure, Effet température, Comportement thermique, Forme en S, Déplacement vers le rouge, Déplacement vers le bleu, Energie activation, Exciton, Diffusion Raman, Analyse morphologique, Caractéristique électrique, Porteur libre, Densité porteur charge, Diode électroluminescente, Rayonnement UV, Matériau dopé, Fabrication microélectronique.
English descriptors
- KwdEn :
- Activation energy, Blueshift, Charge carrier density, Doped materials, Electrical characteristic, Exciton, Free carrier, High temperature, Light emitting diode, MOCVD, Microelectronic fabrication, Microstructure, Morphological analysis, Nucleation, Photoluminescence, Properties of materials, Raman scattering, Redshift, Rutherford backscattering, S shape, Temperature effect, Thermal behavior, Ultraviolet radiation.
Abstract
A set of AlGaN epilayers were grown on sapphire (0001) substrate by MOCVD, with intermediate growths of low/high temperature AlN nucleation layers. Variable flow rates of trimethylindium (TMIn), 0, 50 and 500 sccm were introduced during growth. Three AlGaN samples were originally designed with similar Al composition of -20%. Rutherford backscattering (RBS), RT and 10-300K photoluminescence (PL) were used for analyzing the microstructure of thin flms. The Al content was calculated to decrease with increasing the In-flow rate. Main PL bands spread over 310-350 nm with peaks in 320-335 nm. PL (10-300K) exhibited anomalous temperature dependent emission behavior (specifically an S-shaped shift, i.e. red-blue-red shifts) of the AlGaN related PL emission. Carriers transfer between different luminescent centers. Abnormally high activation energy was obtained, which shows that the excitons are not in the free states. Raman Scattering and spectral line shape analysis leaded to an optical determination of the electrical property free carrier concentration of AlGaN. Our results on In-doped AlGaN provide useful information for designing UV-LEDs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation</title><author><name sortKey="Lin, T Y" uniqKey="Lin T">T.-Y. Lin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University</s1><s2>Taipei, 106-17</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei, 106-17</wicri:noRegion></affiliation></author><author><name sortKey="Li, L" uniqKey="Li L">L. Li</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory of Nuclear Physics and Technology, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name sortKey="Chen, C" uniqKey="Chen C">C. Chen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University</s1><s2>Guangzhou, 510275</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University</wicri:noRegion></affiliation></author><author><name sortKey="Chung, Y L" uniqKey="Chung Y">Y.-L. Chung</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University</s1><s2>Taipei, 106-17</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei, 106-17</wicri:noRegion></affiliation></author><author><name sortKey="Yao, S D" uniqKey="Yao S">S. D. Yao</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State Key Laboratory of Nuclear Physics and Technology, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Beijing, 100871</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Y C" uniqKey="Lee Y">Y.-C. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electronic Engineering and Research Center for Micro/Nano Technology, Tungnan University</s1><s2>Taipei</s2><s3>TWN</s3><sZ>6 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei</wicri:noRegion></affiliation></author><author><name sortKey="Qiu, Z R" uniqKey="Qiu Z">Z. R. Qiu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University</s1><s2>Guangzhou, 510275</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University</wicri:noRegion></affiliation></author><author><name sortKey="Ferguson, I T" uniqKey="Ferguson I">I. T. Ferguson</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Department of Electrical and Computer Engineering, University of North Carolina at Charlotte</s1><s2>NC 28223-0001</s2><s3>USA</s3><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName></affiliation></author><author><name sortKey="Wuu, D S" uniqKey="Wuu D">D.-S. Wuu</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Materials Science and Engineering, National Chung Hsing University</s1><s2>Taichung, 402-27</s2><s3>TWN</s3><sZ>9 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taichung, 402-27</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="07"><s1>Department of Electrical Engineering, Daye University</s1><s2>Zhanhua</s2><s3>TWN</s3><sZ>9 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Zhanhua</wicri:noRegion></affiliation></author><author><name sortKey="Feng, Z C" uniqKey="Feng Z">Z. C. Feng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University</s1><s2>Taipei, 106-17</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Taipei, 106-17</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0068841</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0068841 INIST</idno><idno type="RBID">Pascal:12-0068841</idno><idno type="wicri:Area/Main/Corpus">002292</idno><idno type="wicri:Area/Main/Repository">002A21</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Blueshift</term><term>Charge carrier density</term><term>Doped materials</term><term>Electrical characteristic</term><term>Exciton</term><term>Free carrier</term><term>High temperature</term><term>Light emitting diode</term><term>MOCVD</term><term>Microelectronic fabrication</term><term>Microstructure</term><term>Morphological analysis</term><term>Nucleation</term><term>Photoluminescence</term><term>Properties of materials</term><term>Raman scattering</term><term>Redshift</term><term>Rutherford backscattering</term><term>S shape</term><term>Temperature effect</term><term>Thermal behavior</term><term>Ultraviolet radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété matériau</term><term>Méthode MOCVD</term><term>Haute température</term><term>Nucléation</term><term>Rétrodiffusion Rutherford</term><term>Photoluminescence</term><term>Microstructure</term><term>Effet température</term><term>Comportement thermique</term><term>Forme en S</term><term>Déplacement vers le rouge</term><term>Déplacement vers le bleu</term><term>Energie activation</term><term>Exciton</term><term>Diffusion Raman</term><term>Analyse morphologique</term><term>Caractéristique électrique</term><term>Porteur libre</term><term>Densité porteur charge</term><term>Diode électroluminescente</term><term>Rayonnement UV</term><term>Matériau dopé</term><term>Fabrication microélectronique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A set of AlGaN epilayers were grown on sapphire (0001) substrate by MOCVD, with intermediate growths of low/high temperature AlN nucleation layers. Variable flow rates of trimethylindium (TMIn), 0, 50 and 500 sccm were introduced during growth. Three AlGaN samples were originally designed with similar Al composition of -20%. Rutherford backscattering (RBS), RT and 10-300K photoluminescence (PL) were used for analyzing the microstructure of thin flms. The Al content was calculated to decrease with increasing the In-flow rate. Main PL bands spread over 310-350 nm with peaks in 320-335 nm. PL (10-300K) exhibited anomalous temperature dependent emission behavior (specifically an S-shaped shift, i.e. red-blue-red shifts) of the AlGaN related PL emission. Carriers transfer between different luminescent centers. Abnormally high activation energy was obtained, which shows that the excitons are not in the free states. Raman Scattering and spectral line shape analysis leaded to an optical determination of the electrical property free carrier concentration of AlGaN. Our results on In-doped AlGaN provide useful information for designing UV-LEDs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>8123</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Eleventh International Conference on Solid State Lighting : 22-24 August 2011, San Diego, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>LIN (T.-Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>LI (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEN (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHUNG (Y.-L.)</s1></fA11><fA11 i1="05" i2="1"><s1>YAO (S. D.)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (Y.-C.)</s1></fA11><fA11 i1="07" i2="1"><s1>QIU (Z. R.)</s1></fA11><fA11 i1="08" i2="1"><s1>FERGUSON (I. T.)</s1></fA11><fA11 i1="09" i2="1"><s1>WUU (D.-S.)</s1></fA11><fA11 i1="10" i2="1"><s1>FENG (Z. C.)</s1></fA11><fA12 i1="01" i2="1"><s1>KANE (Matthew Hartmann)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>WETZEL (Christian)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HUANG (Jian-Jang)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University</s1><s2>Taipei, 106-17</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>State Key Laboratory of Nuclear Physics and Technology, Peking University</s1><s2>Beijing, 100871</s2><s3>CHN</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering Sun Yat-Sen University</s1><s2>Guangzhou, 510275</s2><s3>CHN</s3><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electronic Engineering and Research Center for Micro/Nano Technology, Tungnan University</s1><s2>Taipei</s2><s3>TWN</s3><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Electrical and Computer Engineering, University of North Carolina at Charlotte</s1><s2>NC 28223-0001</s2><s3>USA</s3><sZ>8 aut.</sZ></fA14><fA14 i1="06"><s1>Department of Materials Science and Engineering, National Chung Hsing University</s1><s2>Taichung, 402-27</s2><s3>TWN</s3><sZ>9 aut.</sZ></fA14><fA14 i1="07"><s1>Department of Electrical Engineering, Daye University</s1><s2>Zhanhua</s2><s3>TWN</s3><sZ>9 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>812309.1-812309.12</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8733-9</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174762280080</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>35 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0068841</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A set of AlGaN epilayers were grown on sapphire (0001) substrate by MOCVD, with intermediate growths of low/high temperature AlN nucleation layers. Variable flow rates of trimethylindium (TMIn), 0, 50 and 500 sccm were introduced during growth. Three AlGaN samples were originally designed with similar Al composition of -20%. Rutherford backscattering (RBS), RT and 10-300K photoluminescence (PL) were used for analyzing the microstructure of thin flms. The Al content was calculated to decrease with increasing the In-flow rate. Main PL bands spread over 310-350 nm with peaks in 320-335 nm. PL (10-300K) exhibited anomalous temperature dependent emission behavior (specifically an S-shaped shift, i.e. red-blue-red shifts) of the AlGaN related PL emission. Carriers transfer between different luminescent centers. Abnormally high activation energy was obtained, which shows that the excitons are not in the free states. Raman Scattering and spectral line shape analysis leaded to an optical determination of the electrical property free carrier concentration of AlGaN. Our results on In-doped AlGaN provide useful information for designing UV-LEDs.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Propriété matériau</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Properties of materials</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Propiedad material</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Haute température</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>High temperature</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Alta temperatura</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Nucléation</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Nucleation</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" 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i2="X" l="SPA"><s0>Energía activación</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Exciton</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Exciton</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Excitón</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Diffusion Raman</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Raman scattering</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Difusión Ramán</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Analyse morphologique</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Morphological analysis</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Análisis morfológico</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Porteur 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materials</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fN21><s1>051</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Solid State Lighting</s1><s2>11</s2><s3>San Diego CA USA</s3><s4>2011</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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